III-Nitride Power Semiconductor Device

ABSTRACT

A power semiconductor device includes a III-nitride heterojunction body including a first III-nitride body and a second III-nitride body having a different band gap than that of the first III-nitride body, a first power electrode coupled to the second III-nitride body, a second power electrode coupled to the second III-nitride body, a gate arrangement disposed between the first and second power electrodes, and a conductive channel that includes a two-dimensional electron gas that in a conductive state includes a reduced charge region under the gate arrangement that is less conductive than its adjacent regions. The reduced charge region extends beyond an edge of the gate arrangement toward one of the power electrodes only.

RELATED APPLICATION

This application is based on and claims priority to the of U.S.Provisional Application Ser. No. 60/784,054, filed on 20 Mar. 2006 andU.S. patent application Ser. No. (to be assigned), filed 19 Mar. 2007,the entire disclosures of which are incorporated herein by reference.

DEFINITION

III-nitride (or III-N) as used herein refers to a semiconductor alloyfrom the InAlGaN system that includes at least nitrogen and anotheralloying element from group AlN, GaN, AlGaN, InGaN, InAlGaN, or anycombination that includes nitrogen and at least one element from groupIII are examples of III-nitride alloys.

BACKGROUND OF THE INVENTION

Referring to FIG. 1, a conventional III-nitride power semiconductordevice includes a III-nitride heterojunction body 10. III-nitrideheterojunction body 10 includes first III-nitride semiconductor body 12formed with one III-nitride semiconductor alloy (e.g. GaN) and secondIII-nitride semiconductor body 14 on body 12 formed with anotherIII-nitride semiconductor alloy having a band gap different from that offirst III-nitride semiconductor body 12 (e.g. AlGaN).

As is known, the composition and thickness of each III-nitridesemiconductor body 12, 14 is selected to generate a two-dimensionalelectron gas 16 (2-DEG) at the heterojunction of the two bodies 12, 14.

2-DEG 16 to generated is rich in carriers and serves as a conductivechannel between a first power electrode 18 (e.g. source electrode) whichis ohmically coupled to second III-nitride body 14 and second powerelectrode 20 (e.g. drain electrode) which is also ohmically coupled tosecond III-nitride body 14. To control the state of conductivity betweenfirst power electrode 18 and second power electrode 20, a gatearrangement 22 is disposed between first 18 and second 20 powerelectrodes, which may reside on second III-nitride body 14. Gatearrangement 22, for example, may include a schottky body in schottkycontact with second III-nitride body 14, or alternatively may include agate insulation body and a gate electrode capacitively coupled to 2-DEG16 through the gate insulation.

III-nitride heterojunction 10, in a conventional design, is disposedover a substrate 28. Typically, a transition body 30 is disposed betweensubstrate 28 and heterojunction 10. A passivation body 32 through whichelectrodes 18, 20 are in contact with body 14 may be also provided toprotect the active portion of heterojunction 10.

It has been observed that high electric field build-up near the gatearrangement results in gate breakdown (particularly at the edge closestto the drain electrode of the device). Other disadvantages include lowdrain-source breakdown voltage, and time dependent degradation of deviceparameters due to hot carriers and charge trapping. FIG. 3 illustratesschematically electric field lines 24 near the edges of gate arrangement22 of a device according to FIG. 1.

Referring to FIG. 2, to improve the capability of a III-nitride deviceto withstand breakdown at the edges of its gate, a field plate 26 isprovided that extends laterally from, for example, the gate electrode ofthe device over passivation body 32 toward a power electrode (e.g. drainelectrode) of the device. The provision of field plate 26 reduces thestrength of the electric field at the edge of gate arrangement 22 byspreading the field lines 27 as illustrated schematically in FIG. 4.

While field plate 26 can reduce the intensity of the electric field andimprove the breakdown voltage of the device it is disadvantageousbecause:

1. it increases the active area of the device;

2. while it causes the movement of the point of high electric field tothe edge of field plate 25, it may still allow changes to occur;

3. the increase gate-drain overlap capacitance degrades high frequencyswitching and increases switching losses, which is worsened by theMiller Effect.

SUMMARY OF THE INVENTION

In a device according to the present invention the peak electric fieldat the edges and corners of the gate are reduced by selectively reducingthe mobile charge concentration in the conducting 2-DEG.

According to one aspect of the present invention the mobile chargeconcentration is reduced in a region that is disposed under the gate andextends laterally equal to or greater than the width of the gate, butthe mobile charge concentration is otherwise held very high to keep theparasitic source-drain series resistance to a low value.

A power semiconductor device according to the present invention includesa first III-nitride body and a second III-nitride body having adifferent band gap than that of the first III-nitride body and disposedon the first III-nitride body to form a III-nitride heterojunction, afirst power electrode coupled to the second III-nitride body, a secondpower electrode coupled to the second III-nitride body, a gatearrangement disposed between the first and the second power electrodes,and a conductive channel that includes a two-dimensional electron gasthat in a conductive state includes a reduced charge region under thegate arrangement that is less conductive than its adjacent regions.

In one embodiment, an implanted region in the second III-nitride bodyunder the gate arrangement is configured to cause the reduced chargeregion.

In another embodiment, the gate arrangement is received in a recess overthe reduced charge region, which causes the reduced charge region.

Other features and advantages of the present invention will becomeapparent from the following description of the invention which refers tothe accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional portion of the active region of aIII-nitride device according to the prior art.

FIG. 2 illustrates a cross-sectional portion of the active region ofanother III-nitride device according to the prior art.

FIG. 3 illustrates schematically the electric field lines near the gateof a device according to FIG. 1.

FIG. 4 illustrates schematically the electric field lines near the gateof the device according to FIG. 2.

FIG. 5 illustrates a cross-sectional portion of the active region of aIII-nitride device according to the first embodiment of the presentinvention.

FIG. 6 illustrates a cross-sectional portion of the active region of aIII-nitride device according to the second embodiment of the presentinvention.

FIG. 7 illustrates a cross-sectional portion of the active region of aIII-nitride device according to the third embodiment of the presentinvention.

FIG. 8 illustrates a cross-sectional portion of the active region of aIII-nitride device according to the fourth embodiment of the presentinvention.

FIGS. 9A-9C illustrates various embodiments of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Referring to FIG. 5 in which like numerals identify like features, in adevice according to the present invention 2-DEG 16 includes a reducedcharge region 34 which resides under gate arrangement 22. Reduced chargeregion 34 is preferably twice as wide as gate arrangement 22, may extendbeyond at least one edge of gate arrangement 22, and is less conductivethan adjacent regions of 2-DEG 16 when the 2-DEG is in the conductivestate. That is, in the on state (when there is conduction between thepower electrodes 18, 29), region 34 include fewer carriers than regionsof 2-DEG 16 adjacent each side thereof. As a result, the electric fieldsnear the edges of gate arrangement 22 during the off state of the deviceare weaker compared to the prior art, which may allow for the omissionof the field plate. Note that reduced charge region 34 does not need tobe positioned symmetrically relative to first (source) and second(drain) power electrodes 18, 20 or with respect to gate arrangement 22.Thus, reduced charge region 34 may be discontinuous and arranged in twoportions 34′ 34″ each at one side of gate arrangement 22 (FIG. 9A), mayextend farther in the direction of the drain electrode (FIG. 9B), or mayonly extend in direction of the drain electrode (FIG. 9C) and include noportion extending beyond gate arrangement 22 toward the sourceelectrode. The width of region 34 can be optimized and is expected to bebetween few tens to a few thousands of nanometers.

In a device, according to the embodiment shown by FIG. 5, gatearrangement 22 includes a schottky body 36, which is schottky coupled tosecond III-nitride body 14. Schottky body 36 may be any suitableschottky metal, for example, a nickel/gold stack, wherein the gold isatop the nickel.

Referring to FIG. 6, in which like numerals identify like features, inan alternative embodiment, gate arrangement 22 includes gate insulationbody 38 on second III-nitride body 14, and gate electrode 40, which iscapacitively coupled to 2-DEG 16 (and particularly to reduced chargeregion 34) through insulation 38. Gate insulation body 38 may becomposed of silicon nitride, silicon dioxide, or any suitable gateinsulation, while gate electrode 40 may be composed of any metallic ornon-metallic conductive material. Examples of suitable materials forgate electrode 40 are nickel, titanium tungsten, titanium nitride, andpolysilicon.

To obtain reduced charge region 34 in the embodiments according to FIGS.5 and 6, negative charge may be introduced into second III-nitride body14 to repel negative carriers (electrons) in the region 34 below gatearrangement 22. The negative charge may be introduced by implantation ofnegatively charged ions or by plasma surface treatment.

Referring now to FIGS. 7 and 8, in which like numerals identify likefeatures, to form reduced charge region 34 according to an alternativeembodiment, recess 42 may be formed in second III-nitride body 14 inwhich gate arrangement 22 is received.

The depth and the width of recess 42 can be configured to partiallyrelieve the stress in second III-nitride body 14 so that a reducedcharge region 34 according to the present invention can be obtained.Note that recess 42 can be as wide as gate arrangement 22, but may bewider (as schematically illustrated) without deviating from the scopeand the spirit of the present invention.

Note that although the provision of a reduced charge region 34 accordingto the present invention may allow for the omission of a field plate, afield plate may be added to further enhance the breakdown capability ofa device according to the present invention without deviating from thescope and spirit of the invention.

Other methods for obtaining a reduced charge region 34 are surfaceplasma treatment, surface chemical treatment, and deposition of asuitable thin film.

In a device according to the preferred embodiment, first and secondpower electrodes 18, 20 may be composed of Ti, Al, Ni, Au, or any othersuitable metallic or non-metallic conductive material, first III-nitridebody 12 may be composed of GaN, second III-nitride body 14, may becomposed of MN, transition layer 30 may be composed of a III-nitridematerial such as AlGaN, and substrate 28 may be composed of silicon.Other suitable substrate materials are silicon Carbide, or sapphire, ora material native to the III-nitride system, such as a GaN substrate.

Although the present invention has been described in relation toparticular embodiments thereof, many other variations and modificationsand other uses will become apparent to those skilled in the art. It ispreferred, therefore, that the present invention be limited not by thespecific disclosure herein, but only by the appended claims.

1-43. (canceled)
 44. A power semiconductor device, comprising: aIII-nitride heterojunction body that includes a first III-nitride bodyand a second III-nitride body having a different band gap than that ofsaid first III-nitride body; a first power electrode comprising aconductive material coupled to said second III-nitride body; a secondpower electrode comprising said conductive material coupled to saidsecond III-nitride body; a gate arrangement including a gate electrodedisposed between said first and said second power electrodes; aconductive channel that includes a two-dimensional electron gas (2DEG)that in a conductive state includes a reduced charge region produced byan implanted region in said second III-nitride body under said gateelectrode, wherein said reduced charge region is less conductive thanregions of said 2DEG adjacent each side of said reduced charge region;said implanted region having implanted charge in said second III-nitridebody, said implanted charge configured to repel electrons in said 2DEGunder and beyond edges of said gate electrode; said reduced chargeregion extending beyond said edges of said gate electrode toward. 45.The power semiconductor device of claim 44, wherein said gatearrangement includes a gate insulation body.
 46. The power semiconductordevice of claim 44, wherein said gate arrangement includes a schottkybody.
 47. The power semiconductor device of claim 44, wherein said gatearrangement is received in a recess over said reduced charge region. 48.The power semiconductor device of claim 47, wherein said recess isconfigured to produce said reduced charge region.
 49. The powersemiconductor device of claim 47, wherein said recess is wider than saidgate arrangement.
 50. The power semiconductor device of claim 44,further comprising at least one implanted region in said secondIII-nitride body under said gate arrangement configured to produce saidreduced charge region.
 51. The power semiconductor device of claim 44,wherein said gate arrangement does not include a field plate.
 52. Thepower semiconductor device of claim 44, further comprising a passivationbody disposed over said III-nitride heterojunction body.
 53. The powersemiconductor device of claim 44, wherein said first III-nitride bodycomprises a semiconductor alloy from the InAlGaN system.
 54. The powersemiconductor device of claim 53, wherein said second III-nitride bodycomprises another semiconductor alloy from the InAlGaN system.
 55. Thepower semiconductor device of claim 44, wherein said first III-nitridebody comprises GaN and said second III-nitride body comprises AlGaN. 56.The power semiconductor device of claim 44, wherein said heterojunctionbody is disposed over a substrate.
 57. The power semiconductor device ofclaim 56, wherein said substrate comprises silicon.
 58. The powersemiconductor device of claim 56, wherein said substrate comprisessilicon carbide.
 59. The power semiconductor device of claim 56, whereinsaid substrate comprises sapphire.
 60. The power semiconductor device ofclaim 56, wherein said substrate comprises a III-nitride material. 61.The power semiconductor device of claim 60, wherein said III-nitridematerial is GaN.
 62. The power semiconductor device of claim 56, furthercomprising a transition body disposed between said substrate and saidIII-nitride heterojunction body.
 63. The power semiconductor device ofclaim 62, wherein said transition body comprises a III-nitride material.